Temperature Dependence of Breakdown Voltage in InAlAsDnGaAs HEMTs: Theory and Experiments
نویسندگان
چکیده
We present results of an experimental and theoretical study of the temperature dependence of the off-state breakdown voltage of InAlAsDnGaAs high electron mobility transistors (HEMTs). We find that the breakdown voltage (BV) has a negative temperature coefficient that is more prominent for lower values of the extrinsic sheet carrier concentration (nJ. Structural parameters such as the insulator thickness and top-to-bottom delta doping ratio have little effect on BV if n, is held constant. These results are consistent with an extension of a new tunneling model for breakdown in HEMTs to include thermionic-field emission.
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